JPS6312870U - - Google Patents
Info
- Publication number
- JPS6312870U JPS6312870U JP9627187U JP9627187U JPS6312870U JP S6312870 U JPS6312870 U JP S6312870U JP 9627187 U JP9627187 U JP 9627187U JP 9627187 U JP9627187 U JP 9627187U JP S6312870 U JPS6312870 U JP S6312870U
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- layer
- semiconductor laser
- mixed crystal
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005253 cladding Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987096271U JPH0410705Y2 (en]) | 1987-06-22 | 1987-06-22 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987096271U JPH0410705Y2 (en]) | 1987-06-22 | 1987-06-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6312870U true JPS6312870U (en]) | 1988-01-27 |
JPH0410705Y2 JPH0410705Y2 (en]) | 1992-03-17 |
Family
ID=30961824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1987096271U Expired JPH0410705Y2 (en]) | 1987-06-22 | 1987-06-22 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0410705Y2 (en]) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
-
1987
- 1987-06-22 JP JP1987096271U patent/JPH0410705Y2/ja not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPH0410705Y2 (en]) | 1992-03-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS61183987A (ja) | 半導体レ−ザ− | |
JPS6312870U (en]) | ||
JPH06132608A (ja) | 半導体レーザ及びその製造方法 | |
JPS61102086A (ja) | 半導体レ−ザ | |
JP2685499B2 (ja) | 半導体レーザ素子 | |
JPH0710015B2 (ja) | 半導体レ−ザ装置及びその作製方法 | |
JPS62137893A (ja) | 半導体レ−ザ | |
JPH0682886B2 (ja) | 半導体レーザ装置の製造方法 | |
JPH05190979A (ja) | 面発光半導体レーザ | |
JPH0578810B2 (en]) | ||
JP2822195B2 (ja) | 半導体レーザーの製造方法 | |
JPH0637395A (ja) | 半導体レーザ装置 | |
JP2804533B2 (ja) | 半導体レーザの製造方法 | |
JPH0234828Y2 (en]) | ||
JPH0345677U (en]) | ||
JPH0247067U (en]) | ||
JPH0380589A (ja) | 半導体レーザ素子の製造方法 | |
JPH0433387A (ja) | 半導体レーザおよびその製造方法 | |
JPS6142188A (ja) | 半導体レ−ザ装置 | |
JPH0740621B2 (ja) | 面発光型半導体レ−ザの製造方法 | |
JPS63200359U (en]) | ||
JPH0243789A (ja) | 埋込型半導体レーザ素子の製造方法 | |
JPS63169087A (ja) | 半導体レ−ザ | |
JPS61244082A (ja) | 半導体レ−ザ装置 | |
JPS6411565U (en]) |